报告人：IBM Microelectronics 王晓东博士
Enabling Technologies for Analog, Mixed Signal, RF and mmWave Ics
Dawn Wang received her BSEE and MSEE, Beijing, China, in 1985 and 1987, respectively. She also received her M. S. in Solid State Physics from Arizona State University in 1993.
Dawn has held various technical positions in Texas Instruments of Tucson, TriQuint Boston design center, and IBM Boston Wireless design center. She has over 13 years of wide range of experience in technology and product development for RF, Analog/Mixed Signal (AMS) integrated circuits. From 1995 to 1998 in Texas Instruments (then Burr-Brown), as a device engineer, she was involved with parametric tests, product yield enhancement, and test-site designs for modeling and technology development for high precision AMS products. After joining IBM Boston design center in 1998, she has focused on the radio frequency integrated circuit (RFIC) designs in SiGe BiCMOS and RFCMOS technologies for front-end wireless handset applications. She drove the efforts to improve the model-to-hardware correlation for RF models and design kits. She was also actively engaged with the IBM technology development team to define high performance RF devices.
From 2002 to 2005, she was with TriQuint Semiconductors, working on the design, characterization and development of SiGe and GaAs power amplifier (PA) front end module for CDMA and WCDMA applications. Currently Dawn is a senior engineer in IBM, responsible for consultation, technical support, and training of RFIC design, models, and product design kits. She is a technical lead providing the foundry solutions for worldwide sales for analog/RF and millimeter wave applications.
Dawn has published many technical papers and holds 6 US patents in Analog and RFIC designs. She is one of the honoree in the 11th National Woman of Color Technology Award as Technology All-star for 2006. She is a member in Wireless working group of International Technology Roadmap of Semiconductor (ITRS) & a member in ICSICT program committee. Her current research interests include the RF reference circuit designs in advanced SiGe BiCMOS and RFCMOS technologies.
Enabling Technologies for Analog, Mixed Signal, RF and mmWave ICs
SiGe/RFCMOS Technology Roadmap
Moore’s law and More than Moore
IBM SiGe/RFCMOS Technology Roadmap
Processing Scaling vs. Function Diversifications
SiGe vs. RFCMOS Application and Technology Selection
Technology Comparison of 180nm, 130nm, 90nm & 65nm
SOI CMOS technology for RF switch
HBT Device Performances
Power Amplifier Technology with Through Silicon Via (TSV)
Advanced High Performance RF Passives
Resistors, Inductors and Capacitors
Design Kits Enablement
Hardware Based Compact Modeling
Fully Scalable Pcells
Model reference guide
Tool Supports, Standard Cell Library
IPs and Ready for IBM Third Party Partners
MPW Programs: MOSIS and HKSTP